The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC39V5964A is an internally impedance‑matched GaAs power FET designed for 5.9‑6.4 GHz band amplifiers. It provides high output power, high gain, and good efficiency in a hermetically sealed metal‑ceramic package.
Mitsubishi Electric stresses safety in circuit designs, recommending non‑flammable materials, protective auxiliary circuits, and careful placement to avoid injury, fire, or property damage. The document also includes bias recommendations and absolute maximum ratings.
| Frequency band | 5.9 – 6.4 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Linear power gain (GLP) | 10.5 dB |
| Power added efficiency (PAE) | 30 % |
| Drain current (ID) max | 7.5 A |
| Gate‑to‑drain breakdown voltage (VGD0) | -15 V |
| Gate‑to‑source breakdown voltage (VGS0) | -15 V |
| Total power dissipation (PT) | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
| Recommended bias VDS | 10 V |
| Recommended bias ID | 2.4 A |
The typical output power at 1 dB gain compression is 8 W in the 5.9‑6.4 GHz band.
Mitsubishi Electric recommends a drain‑source voltage of 10 V and a drain current of 2.4 A.
Users should keep safety first, using non‑flammable materials, protective auxiliary circuits, and proper placement to avoid injury or fire.