The MGFC40V3742 is a high-performance device in the RF power amplifier. It has high output power, high power gain, high power added efficiency and low distortion characteristics, and is suitable for 3.7-4.2GHz frequency band power amplifiers and digital wireless communications applications.
The MGFC40V3742 is a C‑band internally impedance‑matched GaAs power FET designed for use in 3.7‑4.2 GHz band power amplifiers. It features a hermetically sealed metal‑ceramic package for high reliability and provides typical output power of 10 W, linear gain of 110 dB, and power‑added efficiency of 32 %.
The datasheet lists recommended bias conditions (VDS = 10 V, ID = 2.4 A, RG = 500 Ω), absolute maximum ratings, and detailed electrical characteristics. Safety notices advise proper circuit design practices and reference Mitsubishi Electric's export and liability statements.
| Frequency band | 3.7‑4.2 GHz |
|---|---|
| Typical output power | 10 W |
| Linear power gain (typ.) | 110 dB |
| Power added efficiency (typ.) | 32 % |
| Gate‑to‑drain breakdown voltage | -15 V |
| Maximum drain current | 7.5 A |
| Total power dissipation | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 10 W at 3.7‑4.2 GHz.
Recommended bias is VDS = 10 V, ID = 2.4 A, and RG = 500 Ω.
The maximum drain current rating is 7.5 A.
Typical power added efficiency is 32 %.