MGFC41V3642 is a GaAs power FET designed for use in 3.6-4.2 GHz band amplifiers, featuring high output power, high power gain, and high power added efficiency.
The MGFC41V3642 is an internally impedance‑matched GaAs power FET designed for use in 3.6 – 4.2 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Key features include Class A operation, 50 Ω internal matching, typical output power of 14 W, typical gain of 12.5 dB, and a typical power‑added efficiency of 40 %.
| Frequency band | 3.6 – 4.2 GHz |
|---|---|
| Typical output power | 14 W |
| Typical gain (GLP) | 12.5 dB |
| Typical power‑added efficiency (PAE) | 40 % |
| Third‑order intermodulation (IM3) | -45 dB |
| Gate‑to‑drain breakdown voltage (V_GDO) | -15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | -15 V |
| Maximum drain current (I_D) | 12 A |
| Reverse gate current (I_GR) | -30 mA |
| Forward gate current (I_GF) | 63 mA |
| Total power dissipation (P_T) | 57.7 W |
| Junction temperature limit | 175 °C |
| Storage temperature range | -65 °C to +175 °C |
| Transconductance (g_m) | 3 S |
| Thermal resistance (R_th) | 2.8 °C·W |
The typical output power is 14 W at 3.6 – 4.2 GHz.
It operates in the 3.6 – 4.2 GHz C‑band.
The maximum drain current is 12 A.
Typical PAE is 40 % at 3.6 – 4.2 GHz.