The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC41V5964 is an internally impedance‑matched GaAs power FET designed for 5.9 – 6.4 GHz band amplifiers, offering up to 12 W output power in a hermetically sealed metal‑ceramic package. Key features include Class A operation, high output power, high gain (≈9.5 dB), and a power‑added efficiency of about 33 %.
The document provides detailed electrical characteristics, recommended bias conditions (VDS = 10 V, ID = 3.4 A, RG = 500 Ω), typical S‑parameter curves, and safety notices for circuit designers. It also includes mechanical outline dimensions and storage temperature ranges.
| Frequency band | 5.9 – 6.4 GHz |
|---|---|
| Typical output power | 12 W |
| Linear Power Gain (GLP) | 9.5 dB |
| Power‑added efficiency (PAE) | 33 % |
| Third‑order IM distortion (IM3) | -45 dBc |
| Gate‑to‑drain breakdown voltage (V_GD) | -15 V |
| Gate‑to‑source breakdown voltage (V_GS) | -15 V |
| Drain current (I_D) | 12 A |
| Total power dissipation (P_T) | 53.6 W |
| Operating temperature | up to 175 °C |
| Storage temperature range | -65 °C to +175 °C |
The typical power‑added efficiency is 33 % at 5.9 – 6.4 GHz.
The device can handle a drain current up to 12 A.
It operates in the 5.9 – 6.4 GHz C‑band.