The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC41V6472 is an internally impedance‑matched GaAs power FET designed for 6.4‑7.2 GHz band amplifiers. It provides up to 12 W output power, 9 dB typical linear gain, and 32 % typical power‑added efficiency while being housed in a hermetically sealed metal‑ceramic package for high reliability.
Mitsubishi Electric emphasizes safety in circuit designs, recommending proper biasing (VDS = 10 V, ID = 3.4 A) and adherence to absolute maximum ratings. The document also includes legal notices about export controls, liability, and the need to verify the latest product data with an authorized distributor.
| Frequency band | 6.4‑7.2 GHz |
|---|---|
| Typical output power | 12 W |
| Power‑added efficiency (PAE) | 32 % (typ) |
| Linear power gain (GLP) | 9.0 dB (typ) |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Drain current (I_D) max | 12 A |
| Total power dissipation (P_T) | 53.6 W |
| Case temperature limit | 175 °C |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 12 W at 6.4‑7.2 GHz.
Recommended bias is V_DS = 10 V and I_D = 3.4 A.
Both gate‑to‑drain and gate‑to‑source breakdown voltages are limited to 15 V.