MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1-7.7GHz band amplifiers.
The MGFC41V7177 is an internally impedance‑matched GaAs power FET designed for 7.1‑7.7 GHz band amplifiers. It offers up to 12 W output power, high gain and efficiency in a hermetically sealed metal‑ceramic package.
The document provides detailed electrical characteristics, recommended bias conditions, typical performance curves, S‑parameters and extensive safety guidelines for circuit designers.
| Frequency band | 7.1‑7.7 GHz |
|---|---|
| Typical linear power gain (GLP) | 7‑8 dB |
| Typical power added efficiency (PAE) | 30 % |
| Drain current (ID) | 12 A |
| Thermal resistance (Rth) | 2.8 °C/W |
The recommended drain‑source voltage is 10 V.
The typical PAE is about 30 %.