RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
The RDO7MUS2B is a silicon RF power MOSFET designed for VHF/UHF/870 MHz RF power amplifier applications. It offers high power gain and efficiency across multiple frequency bands (175 MHz, 527 MHz, 870 MHz) with typical output powers up to 7 W.
The document provides detailed electrical characteristics, absolute maximum ratings, typical performance curves, RoHS compliance information and extensive safety precautions for designers integrating the device into high‑frequency power stages.
| Drain current (I_D) | 3 A |
|---|---|
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (junction‑to‑case) | 2.5 °C/W |
The product is RoHS compliant and this is indicated by the letter “G” after the lot number.
At 175 MHz the typical output power is 7 W with a gain of 13.8 dB; at 527 MHz the typical output power is 8 W with a gain of 13.0 dB.