RD05MMP1 is a MOSFET type transistor specifically designed for UHF RF power amplifiers applications.
The RDOSMMP1 is a silicon RF power MOSFET designed for UHF RF power amplifier applications around 941 MHz. It offers a typical output power of 5.5 W, a gain greater than 8.9 dB at Vdd = 7.2 V, and a minimum efficiency of 43 %.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit details, and S‑parameter measurements at various bias currents. Safety and RoHS compliance notes are also included.
| Drain‑to‑Source Voltage (VDS) | 40 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | -5 V to +10 V |
| Drain Current (ID) | 3 A |
| Storage Temperature (Tstg) | -40 °C to +125 °C |
| Thermal Resistance Junction‑to‑Case (Rth j‑c) | 1.7 °C/W |
| Channel Power Dissipation (PD) | 73 W |
| Typical Output Power (Pout) | 5.5 W @ 941 MHz, Vdd = 7.2 V |
| Gain (Gp) | > 8.9 dB @ Vdd = 7.2 V, 941 MHz |
| Efficiency | ≥ 43 % @ 941 MHz |
| Gate Threshold Voltage (VTH) | 0.5 V – 2.5 V |
| Input Power (Pin) | 1.4 W @ Zg = 50 Ω |
The maximum drain‑to‑source voltage is 40 V.
Yes, the RDOSMMP1 is RoHS compliant.
The typical output power is specified at 941 MHz.
The device should be kept below 120 °C (or 140 °C for higher‑rated versions) to maintain reliability.