RD00HHS1 is a RF power MOSFET from Rohm, featuring high power gain and low power consumption, it is suitable for HF band power amplifier applications
The RDOOHHS1 is a silicon RF power MOSFET designed for high‑frequency (30 MHz) amplifier applications such as mobile radio sets. It offers a maximum drain‑to‑source voltage of 30 V, a gate‑to‑source rating of +10 V, and can dissipate up to 3.1 W of channel power.
The document provides detailed electrical characteristics, typical performance curves, S‑parameter data, and extensive safety and handling guidelines, including RoHS compliance, ESD sensitivity, and high‑temperature precautions.
| Drain current (Id) | 200 mA |
|---|---|
| Storage temperature range | -40 °C to +125 °C |
| Operating frequency | 30 MHz |
Yes, the device is listed as RoHS compliant in the datasheet.
The RD series MOSFETs are sensitive to ESD voltage, so appropriate ESD precautions must be taken.
The device can generate heat; users should avoid touching it while hot and keep combustible materials away.
The maximum drain current is specified as 200 mA.