RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.
The RDO2MUS2 is a silicon RF power MOSFET designed for VHF/UHF RF power amplifier applications. It features an internal monolithic Zener diode for ESD protection and is RoHS compliant.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, impedance data, and safety precautions for reliable integration into high‑frequency power devices.
| Drain current (ID) | 1.5 A |
|---|---|
| Storage temperature range | -40 °C to +125 °C |
The device should be stored between –40 °C and +125 °C.