The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.
The RA20H8994M is a 20‑watt silicon RF MOSFET amplifier module for 12.5‑V mobile radios operating in the 896‑941 MHz band. It features enhancement‑mode MOSFET transistors, low‑power gate control (≈1 mA) and can be used for both non‑linear FM and linear AM modulation.
The module is supplied in an H2S package (66 × 21 × 9.88 mm) and is RoHS compliant. Mechanical design includes an alumina substrate, copper flange, and a plastic cap. Proper ESD handling, heat‑sink mounting (M3 screws, 4‑6 kgf‑cm torque) and soldering guidelines are provided to ensure reliability.
| Frequency range | 896‑941 MHz |
|---|---|
| Maximum output power | 20 W |
| Input power (maximum) | 100 mW |
| Drain voltage (Vpp) | 17 V |
| Gate voltage (Vaa) limit | < 5 V |
| Gate current (typical) | 1 mA |
| Total efficiency (typical) | 25 % |
| Input VSWR (max) | 3:1 |
| Package size | 66 × 21 × 9.88 mm |
| Operating temperature range (case) | -30 °C to +110 °C |
| Storage temperature range | -40 °C to +110 °C |
Nominal output power becomes available at a gate voltage of about 4.5 V (typical) to 5 V (maximum).
The module is sensitive to ESD voltages down to 1000 V and requires appropriate ESD precautions.
M3 screws should be tightened to a torque of 4.0 to 6.0 kgf‑cm.
RoHS compliance is indicated by the letter “G” after the lot marking.