The RDO6HVF1 is a silicon MOSFET power transistor designed for VHF RF power amplifier applications, operating at 175 MHz with up to 6 W output. It is RoHS compliant and intended for the output stage of high‑power mobile radio sets.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit details, impedance data, S‑parameter measurements, and extensive safety and handling precautions for reliable integration into RF designs.
| Drain current (Id) | 3 A |
|---|---|
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -40 °C to +150 °C |
| Thermal resistance (junction‑to‑case) | 45 °C/W |
It is specified for operation at 175 MHz.
Yes, RoHS compliance is indicated by the letter “G” after the lot marking.