The RA20H8087M-101 is a 20-watt RF power module from Silicon that operates in the 806- to 870-MHz range.
The RA20H8087M is a 20‑watt RF MOSFET amplifier module designed for 12.5‑V mobile radios operating in the 806‑870 MHz band. It uses enhancement‑mode MOSFET transistors and provides up to 20 W output power with low‑power gate control (typical 1 mA at 5 V). The module can be used for non‑linear FM modulation or linear AM modulation by adjusting gate voltage and input power.
The datasheet lists electrical characteristics, maximum ratings, and typical performance curves, along with mechanical dimensions (66 × 21 × 9.88 mm) and mounting guidelines. Safety notes cover RoHS compliance, ESD sensitivity (down to 1000 V), heat‑sink flatness (<50 µm), and recommended torque for mounting screws (4‑6 kgf‑cm).
| Frequency Range | 806‑870 MHz |
|---|---|
| Supply Voltage (Vpp) | 12.5 V |
| Input Power (Pin) | 50 mW |
| Typical Efficiency | 25 % |
| Gate Current (typical) | 1 mA |
| Package Size | 66 × 21 × 9.88 mm |
| Operating Temperature Range | -30 °C to +110 °C |
| Storage Temperature Range | -40 °C to +110 °C |
| RoHS Compliance | Yes |
The nominal output power becomes available at a gate voltage of about 4.5 V typical and up to 5 V maximum.
The module is sensitive to ESD voltages down to 1000 V and requires appropriate ESD precautions.