The RA18H1213G is an 18-watt RF MOSFET Amplifier Module designed for 12.5-volt mobile radios that operate in the 1.24-1.30 GHz range. It features enhancement-mode MOSFET transistors, broadband frequency range, and low-power control current.
The RA18H1213G is a three‑stage MOSFET RF power amplifier designed for mobile radios operating in the 1.24‑1.30 GHz band. It delivers up to 18 W output power at 12.5 V supply, with low gate‑control current (≈1 mA at 5 V) and a broadband frequency range. The module is RoHS‑compliant and packaged in a compact 66 × 21 × 9.88 mm alumina substrate.
Mechanical and thermal recommendations include mounting the module on a flat heat sink (flatness < 50 µm) using M3 screws torqued to 4.0‑6.0 kgf·cm, applying thermal compound, and keeping the case temperature below 90 °C (recommended ≤ 60 °C for normal operation). ESD protection, avoidance of bending forces, and proper flux removal are also required for reliable operation.
| Frequency Range | 1.24‑1.30 GHz |
|---|---|
| Output Power (Pout) | 18 W |
| Total Efficiency (ηT) | >20 % |
| Gate Current (IGG) at VGG=5 V | 1 mA (typ) |
| Module Size | 66 × 21 × 9.88 mm |
| Typical Input Power (Pin) | 200 mW |
Nominal output power becomes available at a typical gate voltage of about 4.5 V and a maximum of 5 V.
The module is sensitive to ESD voltages down to 1000 V, so appropriate ESD precautions are required.