RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications, featuring high power gain and high efficiency.
The Mitsubishi RDOQSMUP2 is a silicon RF power MOSFET designed for UHF RF power amplifier applications. The sheet provides a description, key features such as >8 W output power and high efficiency, and typical application guidance for mobile‑radio output stages.
Detailed electrical characteristics, typical performance curves, test circuit diagrams, S‑parameter data, and extensive safety and handling precautions are included. RoHS compliance and warranty information are also provided.
| Drain‑to‑source voltage (VDS) | 40 V |
|---|---|
| Gate‑to‑source voltage range | -5 V to +10 V |
| Maximum drain current (ID) | 4.0 A |
| Input power (Pin) | 1.6 W |
| Channel dissipation (Pch) | 0.83 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (junction‑to‑case) | 1.5 °C/W |
| Operating frequency (example) | 520 MHz |
| Output power (example) | 8 W |
The device is rated for a maximum drain‑to‑source voltage of 40 V.
Yes, the datasheet states that the RDOQSMUP2 is RoHS compliant.
The typical output power is greater than 8 W at 520 MHz.