RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.
The RDO7MVS2 is a silicon MOSFET power transistor designed for VHF/UHF RF power amplifier applications. It features an internal monolithic Zener diode for ESD protection and delivers up to 7 W output power at 175 MHz and 520 MHz.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit schematics, S‑parameter data, and extensive safety and handling precautions for reliable integration into RF equipment.
| Drain‑to‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑to‑source voltage (V_GSS) | -5 V to +10 V |
| Drain current (I_D) | 3 A |
| Power dissipation (P_D) | 50 W |
| Maximum junction temperature (T_J) | 150 °C |
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (junction‑to‑case) | 2.5 °C/W |
| Typical output power at 175 MHz | 7 W |
| Typical output power at 520 MHz | 7 W |
The maximum drain‑to‑source voltage is 30 V.
It can deliver up to 7 W of output power at 175 MHz with a 7.2 V supply.
Yes, the device is marked as RoHS compliant.