RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. It has high power gain, high efficiency and RoHS compliance.
The RDO7MVS1 is a silicon RF power MOSFET designed for VHF/UHF RF power amplifier applications. It offers up to 7 W output power at 175 MHz and 520 MHz with high gain and efficiency, and is RoHS compliant.
The sheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, test circuit examples, S‑parameter data and extensive safety precautions for handling, ESD protection and thermal management.
| Drain current (I_D) | 3 A |
|---|---|
| Storage temperature range | -40 °C to +125 °C |
Yes, the datasheet states the part is RoHS compliant.