RD100HHF1 is a silicon RF Power MOSFET Transistor designed for HF Band mobile radio sets.
The RD100HHF1 is a silicon RF power MOSFET designed for high‑power amplifier applications up to 30 MHz and 100 W output. It offers high gain (Gp > 11.5 dB) and efficiency around 60 % when operated at 12.5 V supply.
The datasheet lists absolute maximum ratings, typical electrical characteristics, impedance curves, S‑parameter data, and detailed safety and handling guidelines. Users are advised to use adequate heat‑sinking, observe ESD precautions, and follow the RoHS compliance markings.
| Drain‑to‑source voltage (Vds) | 50 V |
|---|---|
| Gate‑to‑source voltage (Vgs) | ±20 V |
| Drain current (Id) | 25 A |
| Channel power dissipation (Pch) | 176.5 W |
| Input power (Pin) | 12.5 W |
| Output power (Pout) at 30 MHz, Vdd = 12.5 V | 100 W |
The maximum drain‑to‑source voltage is 50 V.
It is recommended to utilize a sufficient sized heat‑sink to keep the channel temperature below 120 °C (or 140 °C for higher limits).
Yes, the device is RoHS compliant, indicated by the letter “G” after the lot marking.
Appropriate ESD precautions are required because the RD series MOSFETs are sensitive to ESD voltage.