RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifier applications. It features high power gain and high efficiency.
The RD12MVS1 is a silicon MOSFET power transistor designed for VHF RF power applications such as high‑power amplifiers in mobile radio sets. It operates at 175 MHz with a typical output power of 12 W and includes RoHS‑compliant construction.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and safety precautions for designers. It also outlines recommended heat‑sink requirements and ESD handling guidelines.
| Drain Current (I_D) | 4 A |
|---|---|
| Junction Temperature (T_J) | 150 °C |
| Storage Temperature (T_STG) | -40 °C to +125 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.5 °C/W |