RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF high power amplifiers applications. It features high power, high gain, and high efficiency. Suitable for the output stage of high power amplifiers in VHF/UHF band mobile radio sets.
The RD15HVF1 is a silicon MOSFET power transistor designed for VHF/UHF high‑power amplifier applications. It offers up to 15 W output power, high gain and efficiency on both the 175 MHz VHF band and the 520 MHz UHF band.
The document provides absolute maximum ratings, typical electrical characteristics, S‑parameter data, and extensive safety and handling precautions for reliable integration into RF circuits.
| Drain current (Id) max | 4 A |
|---|---|
| Storage temperature range | -40 °C to +150 °C |
| Typical output power at 175 MHz | 15 W |
| Typical gain at 175 MHz | >14 dB |
| Typical efficiency (VHF band) | 60 % |
| Typical efficiency (UHF band) | 55 % |
Yes, the datasheet states the device is RoHS compliant.