The RD16HHF1 is a silicon RF power MOSFET designed for high‑frequency power amplifier applications in the HF band. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and recommended test circuits.
Safety precautions, RoHS compliance information, and handling guidelines are included, along with S‑parameter data for RF design. The document is intended for engineers selecting or integrating the device into RF transmitter circuits.
| Drain‑to‑source voltage (V_DSS) | 50 V |
|---|---|
| Gate‑to‑source voltage (V_GS) | ±20 V |
| Channel dissipation (P_ch) | 56.8 W |
| Input power (Pin) | 0.8 W |
| Drain current (I_D) | 5 A |
| Maximum channel temperature (T_ch max) | 150 °C |
| Storage temperature range | -40 to +150 °C |
| Thermal resistance (Rθ_j‑c) | 2.2 °C/W |
| Typical gate threshold voltage (V_TH) | 1.7‑4.7 V |
| Typical output power (P_out) | 16‑19 W |
The device is rated for a maximum drain‑to‑source voltage of 50 V.
Yes, the RD16HHF1 is RoHS compliant, indicated by the letter “G” after the lot marking.
The recommended maximum channel temperature is 150 °C (or 175 °C for certain versions).
The typical gate threshold voltage ranges from 1.7 V to 4.7 V.