RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications, with high power gain and high efficiency.
The RD20HMF1 is a silicon RF power MOSFET designed for 900 MHz band amplifiers, offering up to 20 W output power and high efficiency. It is RoHS‑compliant and intended for use in mobile radio sets and other RF power applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, and safety precautions for designers. It also includes a test circuit example and guidelines for thermal management and ESD protection.
| Drain‑to‑source voltage (Vds) | 30 V |
|---|---|
| Gate‑to‑source voltage (Vgs) | ±20 V |
| Maximum drain current (Id) | 6 A |
| Maximum power dissipation (Pd) | 71.4 W |
| Input power (Pin) | 6 W |
| Storage temperature range | -40 °C to +175 °C |
| Thermal resistance (RθJC) | 2.1 °C/W |
| Typical output power at 900 MHz | 20 W |
| Typical drain efficiency | 55 % |
The maximum drain‑to‑source voltage is 30 V.
Yes, the device is RoHS compliant, indicated by the letter “G” after the lot marking.
The typical output power is 20 W at 900 MHz with a 12.5 V drain voltage.