RD30HUF1 is a RF Power MOSFET, specifically designed for UHF RF power amplifiers applications, max output power 30W, work frequency 520MHz, high efficiency 55%
The RD30HUF1 is a silicon MOSFET power transistor designed for UHF RF power amplifier applications up to 520 MHz. It delivers up to 30 W output power with a typical gain greater than 10 dB at a 12.5 V supply.
The datasheet provides absolute maximum ratings, typical electrical characteristics, impedance versus frequency curves, S‑parameter data, a test circuit example, and extensive safety and handling precautions for reliable integration into RF equipment.
| Drain‑to‑source voltage (Vdss) | 30 V |
|---|---|
| Gate‑to‑source voltage (Vgss) | ±20 V |
| Channel dissipation (Pch) | 75 W |
| Drain current (Id) | 7 A |
| Maximum operating temperature (Tchmax) | 175 °C |
| Thermal resistance (junction‑to‑case) | 2.0 °C/W |
| Output power at 520 MHz | 30 W |
| Typical gain (Gp) | >10 dB |
The device is rated for a maximum drain‑to‑source voltage of 30 V.
Yes, the RD30HUF1 is RoHS compliant, indicated by the letter “G” after the lot marking.
The transistor can deliver up to 30 W of output power at 520 MHz with a 12.5 V supply.