RD30HVF1 is a MOS FET type transistor from RD company, specially designed for VHF RF power amplifiers applications. It features high power gain, high efficiency and low cost.
The RD30HVF1 is a silicon MOSFET power transistor designed for VHF RF power amplifier applications, operating at 175 MHz with up to 30 W output. It offers high power gain, 60 % typical efficiency and is RoHS compliant.
The document provides detailed electrical parameters, typical characteristic curves, test circuit diagrams, impedance data, S‑parameter tables and extensive safety and handling precautions for designers and engineers.
| Drain‑to‑source voltage (Vdss) | 30 V |
|---|---|
| Gate‑to‑source voltage (Vgss) | ±20 V |
| Channel dissipation | 75 W |
| Drain current (Id) | 7 A |
| Maximum channel temperature (Tch) | 175 °C |
| Gate threshold voltage (Vth) | 1.3 V – 2.3 V |
The maximum drain‑to‑source voltage is 30 V.
The gate threshold voltage ranges from 1.3 V to 2.3 V.
The device can handle up to 7 A of drain current.