RD45HMF1 is a MOSFET type transistor specially designed for 900MHz-band High power amplifiers applications. Its features are high power and high gain, output power can reach 45W, gain can reach 4.7dB. It is suitable for the output stage of high power amplifiers in the 800-900MHz Band mobile radio sets.
The RD45HMF1 is a silicon RF power MOSFET designed for high‑power amplifiers operating in the 800‑900 MHz band, typically used in mobile radio sets. It offers a maximum output of 45 W at 900 MHz with a gain greater than 4.7 dB when powered from 12.5 V.
Key specifications include a 30 V drain‑to‑source rating, 15 A drain current, 125 W channel dissipation, and typical efficiency of about 50 %. The datasheet also lists detailed S‑parameter data, impedance curves, and extensive safety and handling guidelines for high‑temperature operation and ESD protection.
| Channel dissipation (Pch) | 125 W |
|---|---|
| Drain current (Id) | 15 A |
| Storage temperature range | -40 °C to +175 °C |
| Thermal resistance (Rth j‑c) | 1.2 °C/W |
| Output power (Pout) at 900 MHz | 45 W |
| Typical efficiency | ≈50 % |
| Gain (Gp) | >4.7 dB |
The maximum drain current is 15 A.
The device can be stored from –40 °C up to +175 °C.
The product can generate heat during operation, so it must not be touched while hot and must be kept away from combustible material.
The typical output power is 45 W at 900 MHz with a 12.5 V supply.