RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. It features high power and high gain, with a power output greater than 60W and a gain greater than 7.7dB @ Vdd=12.5V, at a frequency of 520MHz. It has high efficiency, with 55%typ. on UHF Band. It is suitable for the output stage of high power amplifiers in UHF Band mobile radio sets.
The RD60HUF1 is a silicon RF power MOSFET designed for high‑power UHF amplifier applications, offering up to 60 W output at 520 MHz with a 12.5 V supply. It is RoHS compliant and intended for use in mobile radio sets and other RF power stages.
Key specifications include a 30 V drain‑to‑source rating, ±20 V gate‑to‑source rating, 150 W channel dissipation, and a maximum drain current of 20 A. The datasheet also details typical performance curves, input/output impedance versus frequency, S‑parameter data, and extensive safety and handling guidelines.
| Drain‑to‑source voltage (Vdss) | 30 V |
|---|---|
| Gate‑to‑source voltage (Vgss) | ±20 V |
| Channel dissipation | 150 W |
| Drain current (Id) | 20 A |
| Storage temperature | -40 °C to +175 °C |
| Output power (Pout) at 520 MHz, Vdd=12.5 V | 60 W |
| RoHS compliance | Yes |
Yes, the device is RoHS compliant, indicated by the letter “G” after the lot marking.
Avoid touching the device while it is hot, keep combustible materials away, use adequate heat‑sinking, observe ESD precautions, and do not exceed the rated limits.