RD70HHF1 is a high power MOSFET type transistor specifically designed for HF High power amplifiers applications. The transistor features high power and high gain (Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz), high efficiency (60%typ.on HF Band) and RoHS compliance.
The RD7OHHF1 silicon RF power MOSFET is designed for high‑power HF amplifier applications such as mobile radio sets. It offers up to 70 W output at 30 MHz with a typical efficiency of 60 % and a drain‑to‑source voltage rating of 50 V.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit details, S‑parameter data, and extensive safety and handling precautions. Users are advised to observe temperature limits, use appropriate heat‑sinking, and follow ESD protection measures.
| Drain‑to‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑to‑source voltage (VGS) | ±20 V |
| Channel dissipation (PCH) | 150 W |
| Drain current (ID) | 20 A |
| Storage temperature (TSTG) | -40 °C to +175 °C |
| Thermal resistance (RθJC) | 1.0 °C/W |
| Output power (Pout) | 70 W (typ.) at 30 MHz, 12.5 V |
| Drain efficiency | 60 % typical |
| Input power (Pin) | 5 W |
| Input/Output impedance at 30 MHz | Zin 5.28‑j20.08 Ω, Zout 0.77‑j0.22 Ω |
The RD7OHHF1 can withstand up to 50 V between drain and source.
It can deliver up to 70 W of output power at 30 MHz with a 12.5 V supply.