RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. It features high power and high gain, with Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz in the VHF band, and Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz in the UHF band. It also has high efficiency, with 60%typ. on the VHF band and 55%typ. on the UHF band. It is suitable for the output stage of high power amplifiers in VHF/UHF band mobile radio sets. It is RoHS compliant.
The RD70HVF1 is a silicon RF power MOSFET designed for VHF/UHF high‑power amplifier applications. It offers high output power (up to 70 W at 175 MHz) and high gain, with typical efficiencies of 60 % in the VHF band and 55 % in the UHF band. The device is RoHS compliant and intended for the output stage of mobile radio sets.
The sheet provides electrical ratings, typical characteristic curves, test circuit diagrams, impedance and S‑parameter data, as well as safety and handling precautions. It is intended for designers and engineers who need detailed specifications for circuit design and reliability assessment.
| Drain‑to‑source voltage (V_DSS) | 30 V |
|---|---|
| Channel dissipation (Pch) | 150 W |
| Drain current (I_D) | 20 A |
| Maximum channel temperature (Tch) | 175 °C |
| Storage temperature range | -40 °C to +175 °C |
| Thermal resistance (junction‑to‑case) | 1.0 °C/W |
| Output power at 175 MHz | 70 W |
| Gain at 175 MHz | 10.6 dB |
| Efficiency at 175 MHz | 60 % |
| Output power at 520 MHz | 50 W |
| Gain at 520 MHz | 7.0 dB |
| Efficiency at 520 MHz | 55 % |
| RoHS compliance | Yes |
The device can tolerate up to 30 V between drain and source.
It can deliver up to 70 W of output power at 175 MHz with a 12.5 V supply.
Yes, the RD70HVF1 is RoHS compliant.
Use appropriate heat‑sinking, avoid high temperatures, handle with ESD protection, and follow the listed precautions to prevent fire or injury.