This document is an application note for silicon RF power semiconductors, which presents the RF performance of the RD02MUS1B single-stage amplifier at a frequency range of 400 to 470MHz. The document includes data on frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics, and Pout vs. Idq characteristics.
The document provides measured characteristics of the RDO2MUS1B silicon RF power transistor used as a single‑stage amplifier. Data include output power, drain efficiency, power gain, and impedance over the 400‑470 MHz band under a 7.2 V supply.
Measurements were taken with a 50 mW input power and various quiescent currents (Idq 0.2‑0.4 A). The report contains plots of output power versus frequency, gain versus input power, drain current versus drain voltage, and input/output impedance, as well as the equivalent circuit and test‑fixture layout.