This application note shows the test results of surge tolerance for RD-series.
The document is an application note that reports the results of surge‑tolerance testing performed on several RD‑series silicon RF power devices. It is intended for engineers who need to understand the robustness of these components under surge conditions.
Testing was carried out using a human‑model load of 100 pF and 1.5 kΩ, applying a 1‑second surge three times. The devices evaluated include RDO1MUS1, RDO2MUS1, RDO7MVS1, RD30HVF1 and RD30HUF1, with the results summarized in the note.
| Test capacitance | 100 pF |
|---|---|
| Test resistance | 1.5 kΩ |
| Test duration | 1 second, repeated 3 times |
| Tested device types | RDO1MUS1, RDO2MUS1, RDO7MVS1, RD30HVF1, RD30HUF1 |
It shows the test results of surge tolerance for the RD-series silicon RF power semiconductors.
The devices RDO1MUS1, RDO2MUS1, RDO7MVS1, RD30HVF1 and RD30HUF1 were tested.