Silicon RF Power Semiconductors RD07MUS2B TETRA Application Note

This is a Silicon RF Power Semiconductors application note, which introduces the performance data of RD07MUS2B TETRA single-stage amplifier at f=350-400MHz, Vdd=7.2V.


Silicon RF Power Semiconductors RD07MUS2B TETRA Application Note - cover page
Brand
Mitsubishi
Category
Power Amplifier
Document type
Application Note
Language
English
Pages
9
File format
PDF
File size
600 KB
Published
21 March, 2012
Updated
30 September, 2023
MD5 checksum
8D068F7D15523C4E4A14EDC7F9E4E8AD

About this manual

This application note from Silicon RF Power Semiconductors provides measured RF performance of the RD07MUS2B TETRA single‑stage amplifier. It includes summary data, output‑power and input‑power characteristics, impedance versus frequency, and an equivalent circuit.

The document details test conditions (350‑400 MHz, Vdd = 7.2 V, Idq = 250 mA) and presents results such as output power levels of 3 W and 4 W, gain, efficiency, and input/output impedance for each frequency point.

What's inside

  • Summary
  • RF characteristics
  • Input / Output Impedance vs. Frequency characteristics
  • Equivalent circuit
  • Sample history
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