This application note shows the RF wide-band characteristics data (Frequency characteristics, Pout vs. Pin characteristics, Pout vs. Vdd characteristics) at f=135 to 175MHz
This application note (AN‑VHF‑050) documents the wide‑band RF characteristics of Mitsubishi Electric's RDOOHVS1 and RDO2MUS1B 2‑stage power amplifiers. Measurements include frequency response, output power versus input power, and output power versus supply voltage for two supply levels (7.2 V and 6.5 V).
The report also provides the equivalent circuit and a complete parts list for the amplifier modules, enabling designers to evaluate and integrate these devices into RF systems operating in the 135‑175 MHz band.
| Frequency range | 135 MHz – 175 MHz |
|---|---|
| Supply voltage (Vdd) | 7.2 V or 6.5 V |
| Quiescent current Idq1 | 50 mA |
| Quiescent current Idq2 | 200 mA |
| Input power (Pin) used in tests | 5 mW |
The amplifiers were evaluated from 135 MHz to 175 MHz.
Two supply voltages were used: 7.2 V and 6.5 V.
Idq1 was set to 50 mA and Idq2 to 200 mA.
An input power of 5 mW was used.