This is an application note for RD01MUS1 RF characteristics, which introduces the RD01MUS1 RF characteristics
The document is an application note that presents measured RF characteristics of the RDO1MUS1 power transistor at several supply voltages (3.6 V, 4.5 V, 7.2 V) and frequencies (135 MHz, 527 MHz). It includes tables of output power, gain, efficiency and harmonic data, as well as matching‑circuit layouts for both frequencies.
The data were obtained with a bias current of Idq = 100 mA and an input power of Pin = 30 mW. Each voltage condition is shown on separate pages, and the note also supplies component values for the micro‑strip matching networks used in the measurements.
| Frequency (example) | 135 MHz |
|---|---|
| Supply voltage (example) | 7.2 V |
| Input power | 30 mW |
| Quiescent current | 100 mA |
| Output power at 135 MHz, 7.2 V | 31.98 dBm |
The device was evaluated at Vdd = 3.6 V, 4.5 V and 7.2 V.
All measurements were performed with an input power of 30 mW.
The bias current was set to Idq = 100 mA.
At 527 MHz and Vdd = 7.2 V the measured output power is about 31.60 dBm.