Mitsubishi Electric SiRF Devices General Catalog

This manual introduces the features and characteristics of the MITSUBISHI SiRF series RF power amplifier products.


Mitsubishi Electric SiRF Devices General Catalog - cover page
Brand
Mitsubishi
Category
Power Amplifier
Document type
Product Leaflet
Language
English
Pages
11
File format
PDF
File size
507 KB
Published
21 March, 2012
Updated
30 September, 2023
MD5 checksum
4F10A1D99228BEC224F90A4C216FA60C

About this manual

This catalog presents Mitsubishi Electric’s SiRF product family, covering high‑output power Si MOS FET transistors and modules used in mobile radios, car phones, telematics and other radio communication equipment. It includes product listings, key specifications, recommended line‑ups, and application notes.

The document also provides safety and reliability guidelines, such as ESD precautions, temperature limits, load‑impedance recommendations, and warranty conditions for the RA and RD series devices.

What's inside

  • Changes for the Better
  • Application
  • Features
  • High Output Power Si MOS FET (Discrete)
  • High Output Power Si MOS FET Module
  • Application Note
  • Precautions for the use of Mitsubishi silicon RF power amplifier devices

Specifications

Operation Voltage7.2 V, 9.6 V, 12.5 V
Package TypesSOT‑89, TO‑220S, SLP, PMM, Ceramic (Small/Large)

Frequently asked questions

What temperature limits should be observed for RA series devices?

Keep the case temperature below 60 °C under standard conditions and below 90 °C under extreme conditions.

What precaution is required because the devices are sensitive to ESD?

Appropriate ESD precautions must be taken when handling the devices.

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