This application note shows the test results of the electro static discharge level for MITSUBISHI RF Power Modules RA-series products
This application note from Mitsubishi Electric presents electro‑static discharge (ESD) test results for the RA‑series RF power modules that use MOS FET devices. The note explains the test methodology, including test block diagram, pinning, and the conditions used for human and machine model tests.
The document lists the voltage levels at which various pins (Pin to Flange, Vgg, Vdd, Pout) fail for each module type, providing designers with guidance on ESD robustness for devices such as RA13H1317M, RA30H1317M, and others in the series.
| Pin to Flange positive discharge voltage (RA13H1317M) | 2500 V |
|---|---|
| Vgg to Flange positive discharge voltage (RA30H1317M) | Over 6000 V |
| Maximum test voltage used in ESD tests | 6000 V |
The RA‑series modules use MOS FET devices.
Three discharge repetitions are applied for each voltage level.
A test capacitance of 100 pF is used.