This document is an application note for silicon RF power semiconductors, describing the top view of the test fixture for the RA series (H2S/H2M outline) and the top view of the test fixture with a 6-pin type RF module.
The document is an application note for Mitsubishi Electric's silicon RF power semiconductors. It provides details on a test fixture designed for the RA-series (H2S/H2M) modules, including wiring and mechanical layout.
Two versions of the fixture are shown: one for 4‑pin type modules and another for 6‑pin type modules, with supply terminals (Vgg, Vdd), ground connections, RF output, and parallel capacitors referenced to the module datasheet.
It is an application note that describes the test fixture for RA-series (H2S/H2M) silicon RF power semiconductor modules.