This application note provides precautions and recommendations for Mitsubishi Electric's Silicon RF Power Semiconductors.
The document explains how to safely apply Mitsubishi Electric silicon RF power semiconductors, which are intended for mobile communication terminals. It outlines the importance of respecting absolute maximum ratings, proper thermal design, correct mounting and handling procedures, and ESD protection.
Key sections include maximum ratings, normal operating voltage, thermal design limits, mounting torque tables, soldering temperature limits, humidity requirements, and safety warnings for handling and disposal.
| Maximum case temperature (general) | < 90 °C |
|---|---|
| Maximum case temperature (standard conditions) | < 60 °C |
| Normal operating voltage examples | 12.5 V (mobile radio), 9.6 V, 7.2 V (portable radio) |
| Screw torque (kgf‑cm) | M2 1.2 (0.9‑1.5), M2.6 2.4 (1.8‑3), M3 5 (4‑6), M4 11 (9‑14) |
| Sn‑Pb eutectic soldering temperature limit | < 260 °C for ≤10 s or < 350 °C for ≤3 s |
| Recommended relative humidity for ESD control | ≈ 60 % or higher |
No, they are designed for mobile communication terminals and Mitsubishi Electric does not accept liability for failures in base‑station use.
The case temperature should be kept below 90 °C in all conditions and below 60 °C under standard conditions.
Use M2 1.2 kgf‑cm (0.9‑1.5), M2.6 2.4 kgf‑cm (1.8‑3), M3 5 kgf‑cm (4‑6) or M4 11 kgf‑cm (9‑14) as specified.