This document introduces general application considerations for Mitsubishi H-Series IGBT and intelligent power modules, including power circuit design, snubber design and thermal design.
This document provides general application guidelines for Mitsubishi H-Series IGBT and Intelligent Power Modules. It covers power circuit design, snubber design, and thermal management to help designers create reliable high‑power systems.
Key topics include the numbering system, turn‑off surge voltage, free‑wheel diode recovery, ground‑loop mitigation, snubber circuit selection, and methods for estimating power and switching losses. Practical recommendations and example values are given for various module ratings.
| Current Rating (CM100DY‑24H) | 100 A |
|---|---|
| Voltage Rating (CM100DY‑24H) | 1200 V |
| Current Rating (PM600HSA120) | 600 A |
| Recommended Snubber Capacitor per Current | ≈1 µF per 100 A |
Use separate isolated power supplies for each low‑side gate driver, add auxiliary emitters, and place local decoupling capacitors to isolate the gate‑drive return path from the main power bus.
A typical rule of thumb is about 1 µF of polypropylene film capacitor for every 100 A of collector current, placed as close as possible to the module terminals.
Switching loss can be estimated by multiplying the switching frequency by the sum of turn‑on and turn‑off switching energies: P_SW = f_SW × (ESW(on) + ESW(off)).