MITSUBISHI ELECTRIC SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES Manual
Update: 29 September, 2023
This document describes the features of using Mitsubishi IGBT modules, including their ruggedness, low loss, and ease of use. Advanced processing technologies are utilized to achieve low on-state saturation voltages while maintaining high switching speed for 20kHz operation. The document also explains the structure and operation of IGBT modules and provides a comparison with MOSFET and BJT devices.
