The XP131A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP131A1235SR is an N‑channel Power MOSFET with low on‑state resistance and ultra high‑speed switching. Its small SOP‑8 package enables high‑density mounting and it is targeted for notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
Key specifications include a 20 V drain‑source rating, ±12 V gate‑source rating, 7 A continuous drain current, 30 A pulse current, and on‑state resistance as low as 0.035 Ω at 2.5 V gate drive. Thermal resistance is 50 °C/W and switching times are in the tens of nanoseconds range.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±12 V |
| Drain Current (DC) Id | 7 A |
| Pulse Drain Current Idp | 30 A |
| Reverse Drain Current Idr | 7 A |
| On‑State Resistance Rds(on) @ Vgs=2.5 V | 0.035 Ω |
| Input Capacitance Ciss | 760 pF |
| Output Capacitance Coss | 430 pF |
| Turn‑On Delay Time td(on) | 10 ns |
| Rise Time tr | 20 ns |
| Turn‑Off Delay Time td(off) | 55 ns |
The maximum drain‑source voltage is 20 V.
It is intended for notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The device is supplied in a small SOP‑8 package.