The XP132A1635SR is a P-channel Power MOSFET from Nexperia with low on-state resistance and ultra high-speed switching characteristics. It can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP132A1635SR is a P‑channel power MOSFET featuring low on‑state resistance (Rds(on)=0.033 Ω @ Vgs=-4.5 V) and ultra‑high‑speed switching, making it suitable for high‑density mounting in a SOP‑8 package. It is intended for notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
Key electrical parameters include a drain‑source voltage rating of –20 V, a continuous drain current of –8 A, and typical turn‑on delay of 15 ns. Thermal resistance is specified at 50 °C/W, and capacitances are Ciss ≈ 1700 pF, Coss ≈ 1000 pF. Typical performance curves and switching characteristics are provided in the datasheet. This manual is written in Chinese.
| Drain‑Source Voltage (Vdss) | -20 V |
|---|---|
| Continuous Drain Current (Id) | -8 A |
| On‑State Resistance (Rds(on)) | 0.033 Ω @ Vgs=-4.5 V |
| Input Capacitance (Ciss) | 1700 pF |
| Turn‑On Delay Time (td(on)) | 15 ns |
The MOSFET is rated for a maximum drain‑source voltage of –20 V.
It is supplied in a small SOP‑8 surface‑mount package.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.