The XP133A1330SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP133A1330SR is an N‑channel Power MOSFET from Torex featuring low on‑state resistance and ultra‑high‑speed switching. It integrates two FET devices in a compact SOP‑8 package, enabling high‑density mounting.
Key electrical ratings include a 20 V drain‑source voltage, ±8 V gate‑source voltage, 6 A continuous drain current and 20 A pulse current. The device is suited for notebook PCs, cellular phones, on‑board power supplies and Li‑ion battery systems.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±8 V |
| Drain Current (DC) Id | 6 A |
| Drain Current (Pulse) Idp | 20 A |
| On‑State Resistance Rds(on) @ Vgs=4.5V | 0.03 Ω |
| Input Capacitance Ciss | 950 pF |
| Output Capacitance Coss | 430 pF |
| Turn‑On Delay Time td(on) | 15 ns |
| Package | SOP‑8 |
The maximum drain‑source voltage is 20 V.
It is supplied in a small SOP‑8 package.
It is suitable for notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The on‑state resistance is 0.03 Ω at Vgs = 4.5 V.