The XP132A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP132A11A1SR is a P‑channel Power MOSFET offered in a compact SOP‑8 package. It features low on‑state resistance and ultra‑high‑speed switching, making it suitable for notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
Key electrical ratings include a drain‑source voltage of -30 V, gate‑source voltage of ±20 V, continuous drain current of -5 A, and typical on‑resistance of 0.065 Ω (Vgs = ‑10 V). The device also provides input capacitance of 680 pF, output capacitance of 450 pF, and fast switching times (turn‑on delay 15 ns, rise time 20 ns, turn‑off delay 30 ns).
| Drain‑Source Voltage (Vdss) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±20 V |
| Continuous Drain Current (Id) | -5 A |
| On‑State Resistance (Rds(on)) | 0.065 Ω (Vgs=-10V) |
| Package | SOP‑8 |
| Input Capacitance (Ciss) | 680 pF |
| Output Capacitance (Coss) | 450 pF |
| Turn‑On Delay (td(on)) | 15 ns |
| Rise Time (tr) | 20 ns |
| Turn‑Off Delay (td(off)) | 30 ns |
The device can tolerate up to -30 V between drain and source.
It is supplied in an SOP‑8 surface‑mount package.
It is used in notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The typical Rds(on) is 0.065 Ω at Vgs = -10 V.