The XP131A1617SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP131A1617SR is an N‑channel power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching, packaged in a small SOP‑8 for high‑density mounting. It offers a drain‑source voltage of 20 V, gate‑source voltage of ±12 V, and a continuous drain current of 10 A.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems. The datasheet lists detailed electrical characteristics, thermal ratings, and timing parameters to aid designers in selecting the device for high‑efficiency power management.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±12 V |
| Drain Current (DC) Id | 10 A |
| Drain Current (Pulse) Idp | 40 A |
| On‑State Resistance (Rds(on)) at Vgs=4.5 V | 0.014 Ω |
| Input Capacitance (Ciss) | 1650 pF |
| Output Capacitance (Coss) | 1000 pF |
| Turn‑On Delay Time (td(on)) | 15 ns |
| Rise Time (tr) | 25 ns |
| Turn‑Off Delay Time (td(off)) | 65 ns |
The device can withstand up to 20 V between drain and source.
The on‑state resistance is 0.014 Ω when the gate‑source voltage is 4.5 V.
It is suitable for notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The MOSFET can be stored from –55 °C to 150 °C.