XP133A1145SR is an N-channel power MOSFET with low on-state resistance and ultra high-speed switching characteristics. It has two FET devices built in one package, which makes high density mounting possible. It is widely used in notebook PCs, cellular and portable phones, on-board power supplies and Li-ion battery systems.
The XP133A1145SR is an N‑channel power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching. Two FET devices are integrated in a compact SOP‑8 package, enabling high‑density mounting for notebook PCs, cellular phones, on‑board power supplies and Li‑ion battery systems.
Key electrical ratings include a 30 V drain‑source voltage, ±20 V gate‑source voltage, 6 A continuous drain current, 20 A pulse current, and a typical on‑resistance of 0.033 Ω at VGS = 10 V. Thermal resistance, capacitance, and switching times are also specified for design reference.
| Drain‑Source Voltage (Vdss) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±20 V |
| Continuous Drain Current (Id) | 6 A |
| Pulse Drain Current (Idp) | 20 A |
| On‑State Resistance (Rds(on)) | 0.033 Ω (typical, VGS=10V) |
| Package | SOP‑8 |
| Input Capacitance (Ciss) | 620 pF |
| Turn‑On Delay Time (td(on)) | 15 ns |
| Rise Time (tr) | 20 ns |
The device is rated for a maximum drain‑source voltage of 30 V.
It is supplied in a small SOP‑8 surface‑mount package.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The typical on‑state resistance is 0.033 Ω when VGS is 10 V.