XP135A1145SR is an N-channel/P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP135A1145SR is a dual N‑channel/P‑channel power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching. It integrates two FET devices in a compact SOP‑8 package, enabling high‑density mounting.
Key specifications include a drain‑source voltage rating of ±30 V, drain currents of 6 A (N‑channel) and –4 A (P‑channel), typical on‑state resistances of 0.033 Ω (N‑channel) and 0.065 Ω (P‑channel), input capacitance around 620 pF, and turn‑on/off delays of 15 ns/30 ns. The device is targeted for notebook PCs, cellular phones, and on‑board power supplies. This manual is written in Chinese.
| Drain‑Source Voltage (Vdss) | 30 V (N‑channel), -30 V (P‑channel) |
|---|---|
| Drain Current (DC) Id | 6 A (N‑channel), -4 A (P‑channel) |
| Turn‑On Delay Time (td(on)) | 15 ns |
The N‑channel can handle up to 30 V drain‑source voltage.
It is 0.033 Ω.
It is supplied in an SOP‑8 package.
Notebook PCs, cellular and portable phones, and on‑board power supplies.