XP131A1330SR is an N-channel power MOSFET from ON Semiconductor. It has low on-state resistance and ultra high-speed switching characteristics. It can be used in notebook PCs, cellular and portable phones, on-board power supplies, Li-ion battery systems, etc.
The XP131A1330SR is an N‑channel power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching, enabling efficient energy use in high‑density applications. It is supplied in a compact SOP‑8 package for space‑constrained designs.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems. The device provides a 20 V drain‑source rating, 8 A continuous drain current, and a 0.03 Ω on‑state resistance at Vgs = 4.5 V, with fast switching times in the nanosecond range. This manual is written in Chinese.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | 8 V |
| Drain Current (DC) Id | 8 A |
| Input Capacitance Ciss | 950 pF |
| Output Capacitance Coss | 430 pF |
| Turn‑On Delay td(on) | 15 ns |
| Rise Time tr | 20 ns |
The device is rated for a maximum drain‑source voltage of 20 V.
It is supplied in a SOP‑8 surface‑mount package.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.