The XP134A11A1SR is a P‑channel Power MOSFET featuring ultra‑high‑speed switching and low on‑state resistance, making it suitable for notebook PCs, on‑board power supplies, Li‑ion battery systems, cellular phones and other portable applications. Two FET devices are integrated in a single SOP‑8 package, enabling high‑density mounting.
Key specifications include a drain‑source voltage rating of –30 V, gate‑source voltage of +20 V, continuous drain current of –4 A (pulse –16 A), typical on‑state resistance of 0.065 Ω at Vgs = ‑10 V, input capacitance of 680 pF, and a thermal resistance of 62.5 °C/W when mounted on a glass‑epoxy PCB. The datasheet provides detailed electrical, dynamic, switching and thermal characteristics along with typical performance curves.
| On‑State Resistance (Rds(on)) @ Vgs = -10 V | 0.065 Ω |
|---|---|
| On‑State Resistance (Rds(on)) @ Vgs = -4.5 V | 0.11 Ω |
| Drain‑Source Voltage (Vdss) | -30 V |
| Gate‑Source Voltage (Vgss) | +20 V |
| Continuous Drain Current (Id) | -4 A |
| Pulse Drain Current (Idp) | -16 A |
| Power Dissipation (Pd) | 2 W |
| Maximum Junction Temperature (Tj) | 150 °C |
| Input Capacitance (Ciss) | 680 pF |
| Turn‑On Delay Time (td(on)) | 15 ns |
| Thermal Resistance (Rth ch‑a) | 62.5 °C/W |
The on‑state resistance is 0.065 Ω.
It is supplied in an SOP‑8 package.
The device is rated for a maximum drain‑source voltage of –30 V.