XP133A1235SR is a low on-state resistance and ultra high-speed switching N-channel Power MOSFET. This device is a dual FET chip package, high switching speed and power density.
The XP133A1235SR is an N‑channel power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching. It is packaged in a small SOP‑8 footprint, allowing high‑density mounting.
The datasheet lists electrical ratings, thermal characteristics, and typical performance curves, and outlines common applications such as notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±12 V |
| Drain Current (DC) Id | 6 A |
| Pulse Drain Current Idp | 20 A |
| On‑State Resistance Rds(on) @ Vgs=2.5V | 0.048 Ω |
| Input Capacitance Ciss | 760 pF |
| Output Capacitance Coss | 430 pF |
The device is rated for a maximum drain‑source voltage of 20 V.
It is supplied in a small SOP‑8 package.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.