The XP132A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
The XP132A1275SR is a P‑channel power MOSFET with low on‑state resistance and ultra‑high‑speed switching. Its small SOP‑8 package enables high‑density mounting and it is suited for notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
Key electrical ratings include a drain‑source voltage of –20 V, gate‑source voltage of ±12 V, drain current of –5 A, and an on‑state resistance of 0.075 Ω at Vgs = ‑4.5 V. Thermal resistance is 50 °C/W and typical switching times are in the tens of nanoseconds. The datasheet also lists pin functions, absolute maximum ratings, and typical performance curves. This manual is written in Chinese.
| Drain‑Source Voltage (Vdss) | -20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±12 V |
| Drain Current (Id) | -5 A |
| On‑State Resistance (Rds(on)) | 0.075 Ω @ Vgs=-4.5V |
| Package | SOP‑8 |
| Input Capacitance (Ciss) | 770 pF |
| Output Capacitance (Coss) | 440 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
| Rise Time (tr) | 25 ns |
It is intended for notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The on‑state resistance is 0.075 Ω at Vgs = ‑4.5 V.
The device is rated for a maximum drain‑source voltage of –20 V.
It is supplied in an SOP‑8 surface‑mount package.